92706 / 91004 jo im no.7230-1/7 lv8011v overview lv8011v is a 1ch forward/reverse motor driver ic using d-mos fet for output stage. as mos circuit is used, it supports the pwm input. its features are that the on resistance (0.37 ? typ) and current dissipation are low. it also provides protection functions such as heat protection circuit and reduced voltage detection and is optimal for the motors that need high-current (maximum peak current : 5a). absolute maximum ratings at ta = 25 c, sgnd = pgnd = 0v parameter symbol conditions ratings unit maximum power source voltage (for load) vm max -0.5 to 7.5 v maximum power source voltage (for control) v cc max -0.5 to 6.0 v i o max dc 1.0 a i o peak1 t 100ms, f = 2hz 3.0 a maximum output current i o peak2 t 10ms, f = 2hz 5.0 a input voltage v in max -0.5 to v cc +0.5 v operating temperature topr -20 to +75 c storage temperature tstg -55 to 150 c allowable power dissipation pd *specified substrate 800 mw * when mounting the glass epoxy substrate 30mm 50mm 1.6mm. allowable operating range at sgnd = pgnd = 0v parameter symbol conditions ratings unit power source voltage (for load) vm 2.0 to 6.5 v power source voltage (for control) v cc 4.5 to 5.5 v input signal voltage v in 0 to v cc v input signal frequency f max duty = 50% 100 khz charge-pump capacitor c1, c2, c3 0.001 to 0.1 f ordering number : enn*7230 bi-cmos ic forward/reverse motor driver any and all sanyo semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your sanyo semiconductor representative nearest you before using any sanyo semiconductor products described or contained herein in such applications. sanyo semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor products described or contained herein.
lv8011v no.7230-2/7 electric characteristics at ta = 25 c, v cc = vm = 5.0v, sgnd = pgnd = 0v ratings parameter symbol conditions min typ max unit remarks standby power source current for load imo en = 0v 1.0 a 1 standby power source current for control ico en = 0v, in1 = in2 = tin = 5v 50 100 a 2 operating current consumption ic1 en = 5v, vg when non-load. 0.7 1.2 ma 3 high level input voltage v ih 2.5 v cc v low level input voltage v il 00.8 v high level input current (in1, in2) i ih 1.0 a 4 low level input current (in1, in2) i il -1.0 a pull-up resistance value (en, tin) rup 50 100 200 k ? output on resistance ron sum of top and bottom of on resistance value. 0.37 0.60 ? 5 charge-pump voltage vg 9.5 10.4 11 v 6 low voltage detection operating voltage vcs v cc voltage 2.3 2.5 2.7 v 7 thermal shutdown operating temperature ttsd *design target 150 180 210 c 8 charge-pump capacity (ig = 500 a) vgload 9.0 9.9 v 9 ig current dissipation (fin = 20khz) ig 350 a 10 charge pump start-up time tvg c1 = c2 = 0.01 f, cvg = 0.1 f 0.5 1.0 ms 11 [output part] turn-on time tplh 0.9 2.0 s 12 turn-off time tphl 0.3 2.0 s 12 [tout] turn-on time tout c = 500pf 5.0 20 s 12 turn-off time toff c = 500pf 5.0 20 s 12 * it is a design target value an d measurement is not carried out. remarks 1. it shows current dissipation of vm pin in output off state. 2. it shows current dissipation of v cc pin in stand-by state. (the standard current depends on en pin pull-down resistance.) 3. it shows current dissipation of v cc pin in state of en = 5v (stand-by), including current dissipation of vg pin. 4. for in1 and in2 pins, no pull-down and pull-up resistance is needed. (high impedance pin) 5. it shows sum of upper and lower saturation voltages of out pin. 6. it controls charge-pump oscillation and makes specified voltage. 7. when low voltage is detected, the lower output is turned off. 8. when thermal protection circuit is activated, the lower output is turned off. when the heat temperature is fa llen, it is turned on again. 9. ig (vg pin load current) = 500 f 10. it shows vg pin current dissipation in state of pwm input for in pin. 11. it specifies start-up time from 10 % to 90 % when vg is in non-load state (when setting the capacitor between vg and gnd to 0.1 f and v cc is 5v). 12. it specifies 10 % to 90 % for start-up and 90 % to 10 % for shut-down.
lv8011v no.7230-3/7 package dimensions unit : mm 3179b pin assignment 14 12 10 11 13 9 1 2 3 4 5 6 7 8 1 5 1 6 1 7 1 8 tin sgnd c2l c1l in2 tout vm out2 out2 pgnd c2h pgnd out1 out1 vg v cc c1h en in1 vm 20 19 top view lv8011v
lv8011v no.7230-4/7 block diagram true value table z : high-impedance - : don?t care en in1 in2 tin out1 out2 tout mode h h h - l l - brake h h l - h l - forward evolution h l h - l h - reverse rotation h l l - z z - stand by l - - - l l l stdby h - - h - - l tr-off h - - l - - h tr-on * for reduced voltage and thermal protection, the lowe r output is turned off and the motor drive stops. low voltage thermal protection osc,charge_pump level shift er cmos logic diffused resistor c1h c1l vm (15) v cc in1 in2 en sgnd tin out2 (8) pgnd (10) out1 (14) tout vg c2h c2l 17 18 19 20 6 16 4 3 2 5 1 11 7 13 9 12
lv8011v no.7230-5/7 pin description pin no. pin name equivalent circuit pin explanation 20 18 c1l c2l step-up capacitor connection pin 19 17 c1h c2h step-up capacitor connection pin 4 3 in1 in2 driver output switch 2 1 en tin logic enable pin tout output control pin (built-in pull-up resistance) 13 14 7 8 out1 out2 driver output pin (both 2 pins are connected.) continued on next page. v cc 4 3 vg c1h c2h 19 17 12 v cc 20 18 vm v cc 2 1 100k ?
lv8011v no.7230-6/7 continued from preceding page. pin no. pin name equivalent circuit pin explanation 9 tout step-up voltage output pin 6 15 vm driver power source (both 2 pins are connected.) 16 v cc logic power source 12 vg driving circuit unit power source for driver 5 sgnd logic gnd 10 11 pgnd driver gnd (both 2 pins are connected.) application circuit diagram * place it as close as possible to vm and pgnd pins of ic. vg 9 vg c2h c2l 17 18 12 0.01 f 0.1 f 7 13 15 5 16 4 3 2 1 6 9 vm tout v cc in1 in2 en tin sgnd out1 vm out2 19 20 c1l c1h cpu 3 to 5.5v m 9 to 11v 4.5 to 5.5v 12 vg 17 18 c2l c2h out1 14 8 out2 pgnd 10 11 pgnd 2.0 to 6.5v c2 = 0.01 f c1 = 0.01 f cvb = 0.1 f lv8011v *
lv8011v no.7230-7/7 ps specifications of any and all sanyo semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. sanyo semiconductor co., ltd. strives to supply high-quality high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of sanyo semiconductor co., ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. sanyo semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. this catalog provides i nformation as of september, 2004. specificati ons and information her ein are subject to change without notice.
|
